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Title:
SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, STORAGE MEDIUM, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/125449
Kind Code:
A1
Abstract:
A semiconductor-device manufacturing method having the following steps: a step in which a second conductive layer is formed on top of an underlayer that has an insulating layer in which a recess is formed and a first conductive layer that is exposed at the bottom of said recess; a step in which a third conductive layer is formed on top of the aforementioned second conductive layer; a step in which a material that is capable of forming a solid solution with the third conductive layer is deposited onto said third conductive layer; and a step in which the third conductive layer with the aforementioned solid-solution-forming material deposited thereon is heated.

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Inventors:
MATSUMOTO KENJI (JP)
HAMADA TATSUFUMI (JP)
Application Number:
PCT/JP2013/053581
Publication Date:
August 29, 2013
Filing Date:
February 14, 2013
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3205; C23C14/34; H01L21/768; H01L23/532
Domestic Patent References:
WO2011037090A12011-03-31
WO2010116889A12010-10-14
Foreign References:
JP2012009617A2012-01-12
JP2005277390A2005-10-06
JP2011129840A2011-06-30
JP2008205177A2008-09-04
JP2009141315A2009-06-25
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Download PDF:
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Claims:



 
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