Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2013/146278
Kind Code:
A1
Abstract:
Provided is a semiconductor device manufacturing method which has: a step wherein a substrate to be processed is placed on a substrate placing section that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.
Inventors:
YANAGISAWA YOSHIHIKO (JP)
INADA TETSUAKI (JP)
INADA TETSUAKI (JP)
Application Number:
PCT/JP2013/057086
Publication Date:
October 03, 2013
Filing Date:
March 13, 2013
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/316; C23C16/44; H01L21/31; H01L21/318
Domestic Patent References:
| WO2007116768A1 | 2007-10-18 |
Foreign References:
| JP2010153805A | 2010-07-08 | |||
| JP2008190046A | 2008-08-21 | |||
| JP2010034424A | 2010-02-12 |
Download PDF:
Previous Patent: MEDICAL INSTRUMENT
Next Patent: ANALYSIS DEVICE, ANALYSIS METHOD, AND COMPUTER PROGRAM
Next Patent: ANALYSIS DEVICE, ANALYSIS METHOD, AND COMPUTER PROGRAM