SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

WIPO Patent Application WO/2015/145663

A1

[Problem] To improve plasma processing uniformity within a surface to be processed of a subject to be processed, and to improve plasma processing uniformity among subjects to be processed. [Solution] This substrate processing apparatus has: a processing container for processing a subject to be processed; a gas supply system for supplying a processing gas to the inside of the processing container; a gas release system for releasing a gas from the inside of the processing container; a plasma generating unit, which is provided outside of the processing container, and which generates plasma of the processing gas supplied to the inside of the processing container; a flow channel, which is provided between at least the processing container and the plasma generating unit, and which makes a temperature adjustment gas flow along an outer wall of the processing container; an introduction port, which is provided in the circumferential direction of the processing container, and through which the temperature adjustment gas is introduced into the flow channel; and a discharge port, through which the temperature adjustment gas flowed in the flow channel is discharged.

YANAI HIDEHIRO (JP)
HIYAMA SHIN (JP)
SHIMADA TOSHIYA (JP)
ABURATANI YUKINORI (JP)

PCT/JP2014/058865

October 01, 2015

March 27, 2014

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HITACHI INT ELECTRIC INC (JP)

H01L21/3065; H01L21/31

JPH11340149A	1999-12-10
JP2002164298A	2002-06-07
JP2009188162A	2009-08-20
JPS6436021A	1989-02-07

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