Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2017/056155
Kind Code:
A1
Abstract:
A semiconductor device manufacturing method has a step for forming a film on a substrate by performing: a step wherein a source gas is supplied with respect to the substrate via a first nozzle; and a step wherein at least one gas selected from the group consisting of an oxygen-containing gas and a gas containing nitrogen and hydrogen is supplied with respect to the substrate via a second nozzle, which is configured such that gas residue is not generated at the surface thereof as easily as with the first nozzle, or is configured such that contact with gas remaining at the surface does not occur as easily as with the first nozzle.
Inventors:
KOGURA SHINTARO (JP)
SASAJIMA RYOTA (JP)
TAKAGI KOSUKE (JP)
SASAJIMA RYOTA (JP)
TAKAGI KOSUKE (JP)
Application Number:
PCT/JP2015/077336
Publication Date:
April 06, 2017
Filing Date:
September 28, 2015
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
C23C16/455; H01L21/31; H01L21/316; H01L21/318
Domestic Patent References:
| WO2013027549A1 | 2013-02-28 |
Foreign References:
| JP2009088315A | 2009-04-23 | |||
| JP2012146939A | 2012-08-02 | |||
| JP2007027425A | 2007-02-01 | |||
| JP2014063959A | 2014-04-10 | |||
| JP2008041915A | 2008-02-21 | |||
| JP2002324788A | 2002-11-08 | |||
| JP2002075978A | 2002-03-15 | |||
| JPH05198517A | 1993-08-06 | |||
| JPH0316324U | 1991-02-19 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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