Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2010/079816
Kind Code:
A1
Abstract:
Provided is a semiconductor device loaded with a variable resistance element that can increase reliability, increase density and prevent deterioration of insulating characteristics and yield. The semiconductor device has a variable resistance element inside a multilayer wiring layer on a semiconductor substrate. Said variable resistance element has a configuration wherein a variable resistance element film that changes resistance is interposed between an upper electrode and a lower electrode. Said multilayer wiring layer is provided at least with wiring that is electrically connected to said lower electrode and a plug that is electrically connected to said upper electrode. Said wiring also serves as said lower electrode (figure 1).
Inventors:
TADA MUNEHIRO (JP)
SAKAMOTO TOSHITSUGU (JP)
HADA HIROMITSU (JP)
BANNO NAOKI (JP)
SAKAMOTO TOSHITSUGU (JP)
HADA HIROMITSU (JP)
BANNO NAOKI (JP)
Application Number:
PCT/JP2010/050122
Publication Date:
July 15, 2010
Filing Date:
January 08, 2010
Export Citation:
Assignee:
NEC CORP (JP)
TADA MUNEHIRO (JP)
SAKAMOTO TOSHITSUGU (JP)
HADA HIROMITSU (JP)
BANNO NAOKI (JP)
TADA MUNEHIRO (JP)
SAKAMOTO TOSHITSUGU (JP)
HADA HIROMITSU (JP)
BANNO NAOKI (JP)
International Classes:
H01L21/82; H01L27/10; H01L21/822; H01L27/04; H01L45/00; H01L49/00
Domestic Patent References:
WO2008047711A1 | 2008-04-24 | |||
WO2008001712A1 | 2008-01-03 | |||
WO2008149605A1 | 2008-12-11 | |||
WO2007091532A1 | 2007-08-16 |
Foreign References:
JP2008244090A | 2008-10-09 | |||
JP2006319028A | 2006-11-24 |
Other References:
SAKAMOTO T. ET AL: "A Ta205 solid-electrolyte switch with improved reliability", 2007 SYMPOSIUM ON VLSI TECHNOLOGY DIGEST OF TECHNICAL PAPERS, 2007, pages 38 - 39
MICHAEL N.KOZICKI ET AL.: "Nanoscale Memory Elements Based on Solid-State Elecrolytes", IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 4, no. 3, May 2005 (2005-05-01), pages 331 - 338
SHUNICHI KAERIYAMA ET AL.: "A Nonvolatile Programmable Solid-Electrolyte Nanometer Switch", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 40, no. 1, January 2005 (2005-01-01), pages 168 - 176
MICHAEL N.KOZICKI ET AL.: "Nanoscale Memory Elements Based on Solid-State Elecrolytes", IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 4, no. 3, May 2005 (2005-05-01), pages 331 - 338
SHUNICHI KAERIYAMA ET AL.: "A Nonvolatile Programmable Solid-Electrolyte Nanometer Switch", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 40, no. 1, January 2005 (2005-01-01), pages 168 - 176
Attorney, Agent or Firm:
KATO, Asamichi (JP)
Asamichi Kato (JP)
Asamichi Kato (JP)
Download PDF: