SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2010/079827

A1

Disclosed is a semiconductor device with a built-in resistance change element that makes it possible to increase reliability, increase density, and decrease electrode resistance. Disclosed is a semiconductor device that has a resistance change element inside a multilayer wiring layer on a semiconductor substrate, wherein the resistance change element is configured with a resistance change element film, the resistance of which changes, interposed between an upper electrode and a lower electrode, and wherein the multilayer wiring layer is equipped with at least wiring that is electrically connected to the lower electrode and a plug that is electrically connected to the upper electrode, and wherein a barrier metal covers the side surfaces and bottom of the plug, and the topmost part of the upper electrode directly contacts with the barrier metal, and is configured from the same material as the barrier metal, or a material that contains the same constituents as the constituents contained in the barrier metal.

TADA MUNEHIRO (JP)
SAKAMOTO TOSHITSUGU (JP)
SAITO YUKISHIGE (JP)
YABE YUKO (JP)
SAKOTSUBO YUKIHIRO (JP)
HADA HIROMITSU (JP)

PCT/JP2010/050151

July 15, 2010

January 08, 2010

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NEC CORP (JP)
TADA MUNEHIRO (JP)
SAKAMOTO TOSHITSUGU (JP)
SAITO YUKISHIGE (JP)
YABE YUKO (JP)
SAKOTSUBO YUKIHIRO (JP)
HADA HIROMITSU (JP)

H01L27/10; H01L45/00; H01L49/00

WO2005112118A1

2005-11-24

JP2008288436A	2008-11-27
JP2008244090A	2008-10-09
JP2008294201A	2008-12-04
JP2008135659A	2008-06-12

KATO, Asamichi (JP)
Asamichi Kato (JP)

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