Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2014/162937
Kind Code:
A1
Abstract:
Provided is a semiconductor device in which a voltage does not need to be applied to an element-isolating region that self-aligns with word lines (WL). This method for manufacturing said semiconductor device has the following steps: a step in which provisional active regions that are shaped such that active regions (3a) that are adjacent in an X direction are connected to each other are formed; a step in which a sacrificial film is formed; a step in which etching is performed, including the sacrificial film, so as to form a plurality of first trenches that separate the active regions (3a); a step in which element-isolating insulating films (10) are embedded in the first trenches and the sacrificial film is then removed; a step in which first side-wall insulating films that cover the exposed side surfaces of the element-isolating insulating films (10) and second side-wall insulating films that cover the side surfaces of the first side-wall insulating films are formed; a step in which cap insulating films are embedded in second trenches that appear due to the formation of the second side-wall insulating films; and a step in which a plurality of third trenches are formed at the positions of the second side-wall insulating films and word lines (WL) are formed thereunder.
Inventors:
IKEBUCHI YOSHINORI (JP)
Application Number:
PCT/JP2014/058420
Publication Date:
October 09, 2014
Filing Date:
March 26, 2014
Export Citation:
Assignee:
PS4 LUXCO SARL (LU)
IKEBUCHI YOSHINORI (JP)
IKEBUCHI YOSHINORI (JP)
International Classes:
H01L21/8242; H01L21/76; H01L27/108
Foreign References:
| JP2008263201A | 2008-10-30 | |||
| JP2012234964A | 2012-11-29 | |||
| JP2012134395A | 2012-07-12 | |||
| JP2012238642A | 2012-12-06 | |||
| US20110266647A1 | 2011-11-03 |
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (JP)
Mitsuhiro Washizu (JP)
Mitsuhiro Washizu (JP)
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