Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR AND SEMICONDUCTOR MODULE
Document Type and Number:
WIPO Patent Application WO/2016/113841
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor device, a manufacturing method therefor, and a semiconductor module, the semiconductor device comprising an IGBT, a thyristor element, and a circuit region within the same semiconductor substrate, and having the enhanced parasitic operation prevention effect of the circuit region while achieving a reduction in the size of the semiconductor device and a reduction in manufacturing period. This semiconductor device is provided with: an insulated gate bipolar transistor 15 that is formed on the first principal surface side of a semiconductor substrate provided with a first conductivity-type drift layer; a thyristor element 17 that is formed on the first principal surface side of the semiconductor substrate; a circuit region 24 that is formed on the first principal surface side of the semiconductor substrate and includes a CMOS circuit element; a hole current collection region 16 that is formed on the first principal surface side of the semiconductor substrate and separates the insulated gate bipolar transistor 15 and the circuit region 24 in plan view; and a second conductivity-type diffusion layer that is formed on the second principal surface side of the semiconductor substrate. In plan view, an effective area of the insulated gate bipolar transistor 15 is smaller than or equal to an effective area of the thyristor element 17.
Inventors:
NISHIMURA KAZUHIRO (JP)
UENO MAKOTO (JP)
MAMETUKA MASATAKA (JP)
UENO MAKOTO (JP)
MAMETUKA MASATAKA (JP)
Application Number:
PCT/JP2015/050641
Publication Date:
July 21, 2016
Filing Date:
January 13, 2015
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L27/088; H01L21/8234; H01L27/04; H01L27/06; H01L29/739; H01L29/74; H01L29/78
Domestic Patent References:
| WO2003065459A1 | 2003-08-07 |
Foreign References:
| JP2011127444A | 2011-06-30 | |||
| US5798538A | 1998-08-25 | |||
| JP2012089734A | 2012-05-10 | |||
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| JPH04196359A | 1992-07-16 | |||
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Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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