SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Title:

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2018/181019

Kind Code:

A1

Abstract:

The present invention provides a resistance change element that improves set voltage variation between elements. Provided is a semiconductor device that includes at least two resistance change elements, a first terminal, and a second terminal. The resistance change elements each have a first electrode, a second electrode, and a resistance change layer interposed between the first electrode and the second electrode, and has a function of changing a resistance value reversibly on the basis of an electric signal applied between two electrodes, that is to say, the first electrode and the second electrode. The first electrode of each resistance change element is electrically connected to the first terminal, the second electrode of each resistance change element is electrically connected to the second terminal, the resistance change layers are separated from each other between the resistance change elements, and the second electrodes are separated from each other between the resistance change elements and are electrically connected to each other only via the second terminals.

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Inventors:

OKAMOTO KOICHIRO (JP)
TADA MUNEHIRO (JP)
BANNO NAOKI (JP)

Application Number:

PCT/JP2018/011766

Publication Date:

October 04, 2018

Filing Date:

March 23, 2018

Export Citation:

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Assignee:

NEC CORP (JP)

International Classes:

H01L21/8239; H01L27/105; H01L45/00; H01L49/00

Domestic Patent References:

WO2016157820A1	2016-10-06
WO2008001712A1	2008-01-03

Foreign References:

JP2016063118A	2016-04-25
JP2010040665A	2010-02-18
JP2016192510A	2016-11-10

Attorney, Agent or Firm:

SHIMOSAKA Naoki (JP)

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