Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/261521
Kind Code:
A1
Abstract:
In the present invention, the following are provided: a semiconductor substrate (10); and a metal film (22) that is formed on top of the semiconductor substrate (10), that has a section which forms a Schottky junction with the semiconductor substrate (10), and that is made of an aluminum alloy in which an element is added to aluminum. The metal film (22) is constituted by stacking a lower metal layer (22a) disposed on the side of the semiconductor substrate (10) and an upper metal layer (22b) that is disposed on top of the lower metal layer (22a). Furthermore, the lower metal layer (22a) is set to have a thickness of 2.6 μm or less along the stacking direction of the lower metal layer (22a) and the upper metal layer (22b).
Inventors:
NOMA SEIJI (JP)
SHIGA TOMOFUSA (JP)
SENDA KOUJI (JP)
NISHIWAKI TSUYOSHI (JP)
FURUMURA YUTA (JP)
SOENO AKITAKA (JP)
SHIGA TOMOFUSA (JP)
SENDA KOUJI (JP)
NISHIWAKI TSUYOSHI (JP)
FURUMURA YUTA (JP)
SOENO AKITAKA (JP)
Application Number:
PCT/JP2021/023793
Publication Date:
December 30, 2021
Filing Date:
June 23, 2021
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/47; H01L21/28; H01L21/329; H01L21/336; H01L21/8234; H01L27/088; H01L29/78; H01L29/872
Foreign References:
| JPH0376030B2 | 1991-12-04 | |||
| JP2015216200A | 2015-12-03 | |||
| JP2019145667A | 2019-08-29 | |||
| JP2006351717A | 2006-12-28 | |||
| JPH08124877A | 1996-05-17 | |||
| JPH01238162A | 1989-09-22 | |||
| JP2017135283A | 2017-08-03 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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