SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, AND TERMINAL DEVICE

WIPO Patent Application WO/2023/102906

A1

The present application provides a semiconductor device and a manufacturing method therefor, and an electronic device, relates to the technical field of semiconductors, and can improve the short channel effect of a transistor. The semiconductor device comprises a substrate. A channel region, a source region, and a drain region are arranged on the substrate. The source region and the drain region are located on two sides of the channel region, respectively. The substrate is a Si substrate or a SiGe substrate. The substrate is provided with grooves in both the source region and the drain region. A first epitaxial layer and a second epitaxial layer are arranged in the groove, and the second epitaxial layer is close to the bottom of the groove relative to the first epitaxial layer. The first epitaxial layer and the second epitaxial layer are both P-type doped SiGe. The component ratio of Ge in the first epitaxial layer and the concentration of the P-type doped element are fixed values. The component ratio of Ge in the second epitaxial layer and the concentration of the P-type doped element are gradually reduced in the direction away from the first epitaxial layer.

DENG JIANAN (CN)
LIN JUN (CN)
MA XU (CN)
HUAN YAWEI (CN)
TAN HONGZHE (CN)
XU YANLING (CN)

PCT/CN2021/137144

June 15, 2023

December 10, 2021

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HUAWEI TECH CO LTD (CN)

H01L29/36; H01L21/336; H01L21/768; H01L29/45; H01L29/78

US20170047419A1	2017-02-16
US20130154016A1	2013-06-20
CN103985634A	2014-08-13
CN112582268A	2021-03-30

BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)

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