Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/159894
Kind Code:
A1
Abstract:
Embodiments of the present application provide a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a substrate; an epitaxial layer located on one side of the substrate, a doped region being formed on the surface of the epitaxial layer away from the substrate, and the epitaxial layer comprising an active region and a terminal region surrounding the active region; a passivation layer which covers the terminal region and is provided with a window corresponding to the active region; and a metal layer which covers the window and the inner edges of the passivation layer forming the window, and forms a Schottky contact with the active region in the window. According to the solution in the embodiments of the present application, the passivation layer structure is flatly laid below the metal layer, and the passivation layer does not need to coat the metal layer, such that the number of corners formed by the passivation layer is reduced, the stress borne by the passivation layer in temperature changes such as a temperature cycling scenario can be reduced, and the vulnerability to cracking is reduced, thereby avoiding device failure due to moisture intrusion through cracks, and improving the robustness of the device in a high-temperature and high-humidity environment.
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Inventors:
YU YI (CN)
LIU CHIA FU (CN)
WANG YURU (CN)
GAO BO (CN)
TANG LONGGU (CN)
WANG XIN (CN)
ZHAO DONGGUANG (CN)
LUO SHIJIN (CN)
LIU CHIA FU (CN)
WANG YURU (CN)
GAO BO (CN)
TANG LONGGU (CN)
WANG XIN (CN)
ZHAO DONGGUANG (CN)
LUO SHIJIN (CN)
Application Number:
PCT/CN2022/114682
Publication Date:
August 31, 2023
Filing Date:
August 25, 2022
Export Citation:
Assignee:
HUAWEI DIGITAL POWER TECH CO LTD (CN)
International Classes:
H01L21/329; H01L23/31; H01L21/56; H01L29/47; H01L29/872; H01L23/28; H01L23/29
Foreign References:
| CN113451127A | 2021-09-28 | |||
| CN107768260A | 2018-03-06 | |||
| CN113948491A | 2022-01-18 | |||
| US6690037B1 | 2004-02-10 |
Attorney, Agent or Firm:
E-TONE INTELLECTUAL PROPERTY FIRM (GENERAL PARTNERSHIP) (CN)
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