Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2018/059109
Kind Code:
A1
Abstract:
A semiconductor device, manufacturing method thereof, and electronic apparatus comprising same. The semiconductor device comprises: a substrate (1001); a first source/drain layer (1005), a trench layer (1009), and a second source/drain layer (1013) sequentially stacked on the substrate (1001), wherein the trench layer (1009) comprises a semiconductor material enabling an increase of an on-state current and/or a decrease of an off-state current compared with the Si material; and a gate stack formed around a periphery of the trench layer (1009).
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Inventors:
ZHU HUILONG (US)
WANG GUILEI (CN)
RADAMSON HENRY H (CN)
ZHANG YANBO (CN)
ZHU ZHENGYONG (CN)
WANG GUILEI (CN)
RADAMSON HENRY H (CN)
ZHANG YANBO (CN)
ZHU ZHENGYONG (CN)
Application Number:
PCT/CN2017/095178
Publication Date:
April 05, 2018
Filing Date:
July 31, 2017
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L27/088; H01L21/8234; H01L29/78
Foreign References:
| CN106298778A | 2017-01-04 | |||
| CN1906769A | 2007-01-31 | |||
| CN103337519A | 2013-10-02 | |||
| US20020076884A1 | 2002-06-20 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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