Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2011/158821
Kind Code:
A1
Abstract:
The present semiconductor device has multilayer wiring, first electrodes (5) and second electrodes (10a, 10b) provided between the multilayer wiring, and two resistance variable resistance elements (22a, 22b) containing variable resistance element films (9a, 9b) that are sandwiched between the first electrodes (5) and second electrodes (10a, 10b). Either the first electrodes (5) or the second electrodes (10a, 10b) of the two variable resistance elements (22a, 22b) are integrated.
Inventors:
TADA, Munehiro (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
多田 宗弘 (〒01 東京都港区芝五丁目７番１号 日本電気株式会社内 Tokyo, 〒1088001, JP)
MIYAMURA, Makoto (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
多田 宗弘 (〒01 東京都港区芝五丁目７番１号 日本電気株式会社内 Tokyo, 〒1088001, JP)
MIYAMURA, Makoto (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
Application Number:
JP2011/063567
Publication Date:
December 22, 2011
Filing Date:
June 14, 2011
Export Citation:
Assignee:
NEC CORPORATION (7-1 Shiba 5-chome, Minato-ku Tokyo, 01, 〒1088001, JP)
日本電気株式会社 (〒01 東京都港区芝五丁目７番１号 Tokyo, 〒1088001, JP)
TADA, Munehiro (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
多田 宗弘 (〒01 東京都港区芝五丁目７番１号 日本電気株式会社内 Tokyo, 〒1088001, JP)
日本電気株式会社 (〒01 東京都港区芝五丁目７番１号 Tokyo, 〒1088001, JP)
TADA, Munehiro (7-1 Shiba 5-chome, Minato-k, Tokyo 01, 〒1088001, JP)
多田 宗弘 (〒01 東京都港区芝五丁目７番１号 日本電気株式会社内 Tokyo, 〒1088001, JP)
International Classes:
H01L21/82; G11C13/00; G11C29/04; H01L21/3205; H01L23/52; H01L27/10; H01L27/105; H01L45/00; H01L49/00; H03K19/177
Attorney, Agent or Firm:
MIYAZAKI, Teruo et al. (8th Floor, 16th Kowa Bldg. 9-20, Akasaka 1-chome, Minato-k, Tokyo 52, 〒1070052, JP)
Claims: