SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

WIPO Patent Application WO/2013/161449

A1

In the present invention, p+ type regions (3, 4), and a p type region (5) are selectively provided in the front surface layer of a silicon carbide substrate base body. The p+ type region (3) is provided in a breakdown voltage structure section (102) surrounding an active region (101). The p+ type region (4) is provided in the active region (101), and constitutes a JBS structure. The p type region (5) surrounds the p+ type region (3), and constitutes a junction terminal (JTE) structure. A Schottky electrode (9) forms a Schottky junction with an n type silicon carbide epitaxial layer (2). Furthermore, the Schottky electrode (9) extends onto an interlayer insulating film (6) that covers a part of the p+ type region (3) and the p type region (5), and the extending portion functions as a field plate. Consequently, a semiconductor device configured using a highly reliable wide band gap semiconductor that can maintain a high withstand voltage, and a method for manufacturing the semiconductor device can be provided.

JP2011233614	SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
JPS5636160	SCHOTTKY BARRIER TYPE SEMICONDUCTOR DEVICE
JP6065335	Semiconductor device

KINOSHITA AKIMASA (JP)
TSUJI TAKASHI (JP)
FUKUDA KENJI (JP)

PCT/JP2013/057743

October 31, 2013

March 18, 2013

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FUJI ELECTRIC CO LTD (JP)
NAT INST OF ADVANCED IND SCIEN (JP)

H01L29/47; H01L21/336; H01L29/06; H01L29/12; H01L29/41; H01L29/78; H01L29/872

JP2008034646A	2008-02-14
JP2009502040A	2009-01-22
JP2010087483A	2010-04-15
JP2007234925A	2007-09-13

SAKAI, AKINORI (JP)
Akinori Sakai (JP)

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