Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/145815
Kind Code:
A1
Abstract:
A semiconductor device of the present invention is characterized in being provided with: a semiconductor substrate formed of GaAs; an adhesion layer formed of Pd or an alloy containing Pd, said adhesion layer being formed on the semiconductor substrate; a barrier layer formed of Co or an alloy containing Co, said barrier layer being formed on the adhesion layer; and a metal layer formed of Cu, Ag, or Au on the barrier layer.
Inventors:
NISHIZAWA KOICHIRO (JP)
Application Number:
PCT/JP2014/074567
Publication Date:
October 01, 2015
Filing Date:
September 17, 2014
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/3205; C23C18/50; C23C28/00; H01L21/28; H01L21/768; H01L23/532
Foreign References:
| JP2006016684A | 2006-01-19 | |||
| JP2011165810A | 2011-08-25 | |||
| JP2014112634A | 2014-06-19 |
Other References:
DAISUKE TSUNAMI: "Backside Copper metallization technologies of GaAs devices", EXTENDED ABSTRACTS, JAPAN SOCIETY OF APPLIED PHYSICS AND RELATED SOCIETIES, 11 March 2013 (2013-03-11), pages 14 - 102, XP008184180
See also references of EP 3125278A4
See also references of EP 3125278A4
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
Takada 守 (JP)
Takada 守 (JP)
Download PDF: