SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2016/009473

A1

The present invention addresses the problem of providing an inverter circuit formed of one semiconductor column. The problem is solved by means of a semiconductor device that is characterized in having: a third first-conductivity-type semiconductor layer formed on a semiconductor substrate; a first columnar semiconductor layer formed on the semiconductor substrate, said first columnar semiconductor layer having formed therein, in the following order from the substrate side, a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second body region, a second second-conductivity-type semiconductor layer, and a third second-conductivity-type semiconductor layer; a first gate insulating film formed around the first body region; a first gate formed around the first gate insulating film; a second gate insulating film formed around the second body region; a second gate formed around the second gate insulating film; an output terminal connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer; and a first contact that connects the first gate and the second gate to each other.

MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)

PCT/JP2014/068707

January 21, 2016

July 14, 2014

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UNISANTIS ELECT SINGAPORE PTE (SG)
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)

H01L21/8238; H01L27/092

JPH0613623A	1994-01-21
JP2001028399A	2001-01-30
JP2007250652A	2007-09-27
JPH10112543A	1998-04-28
JP2003163280A	2003-06-06
JP2011023543A	2011-02-03

TSUJII Koichi et al. (JP)
辻居 Koichi (JP)

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