Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/159232
Kind Code:
A1
Abstract:
[Problem] To provide a technique that allows the film formation rate to be improved, and a film that exhibits high dry etching resistance properties to be formed. [Solution] This semiconductor device manufacturing method comprises the step of forming a metal carbonitride film containing a metal element, carbon element and nitrogen element on a substrate by repeating, a predetermined number of times in a time-shared manner, the steps of: forming a metal nitride layer containing the metal element and nitrogen element; and forming a metal carbonitride layer containing the metal element, carbon element, and nitrogen element. The steps of forming the metal nitride layer comprises, by repeating a predetermined number of times in a time-shared manner, the steps of: supplying a halogen-based material gas containing the metal element to a substrate; and supplying a nitrogen element-containing reaction gas that reacts with the metal element. The steps of forming a metal carbonitride layer comprises, by repeating a predetermined number of times in a time-shared manner, the steps of: supplying an organic material gas containing the metal element and carbon element to the substrate; and supplying the reaction gas to the substrate. The ratio between the number of repetitions of the step of forming a metal nitride layer and the number of repetitions of the step of forming a metal carbonitride layer is controlled so that the carbon content in the metal carbonitride film is 5 to 50%.
Inventors:
OGAWA ARITO (JP)
KAGA YUKINAO (JP)
HARADA KAZUHIRO (JP)
DEGAI MOTOMU (JP)
KAGA YUKINAO (JP)
HARADA KAZUHIRO (JP)
DEGAI MOTOMU (JP)
Application Number:
PCT/JP2016/060651
Publication Date:
October 06, 2016
Filing Date:
March 31, 2016
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
C23C16/455; C23C16/36; H01L21/3065; H01L21/31; H01L21/314
Foreign References:
| JP2011142226A | 2011-07-21 | |||
| JP2012517101A | 2012-07-26 | |||
| JP2010280991A | 2010-12-16 | |||
| JP2009004786A | 2009-01-08 | |||
| JPH11172438A | 1999-06-29 |
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