Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/159318
Kind Code:
A1
Abstract:
This semiconductor device manufacturing method involves: a first step for providing a first wiring 3 on a first surface 2a of a semiconductor substrate 2; a second step for mounting a light transmitting substrate 5 on the first surface 2a; a third step for making the semiconductor substrate 2 thinner such that the semiconductor substrate 2 is less thick than the light transmitting substrate 5; a fourth step for forming a through-hole 7 in the semiconductor substrate 2; a fifth step for providing a resin insulation layer 10 by dip coating using a first resin material; a sixth step for forming a contact hole 16 on the resin insulation layer 10; and a seventh step for providing a second wiring 8 on the surface 10b of the resin insulation layer 10 and electrically connecting the first wiring 3 and the second wiring 8 in the contact hole 16.
Inventors:
HOSOKAWA NOBURO (JP)
INOUE NAO (JP)
SHIBAYAMA KATSUMI (JP)
INOUE NAO (JP)
SHIBAYAMA KATSUMI (JP)
Application Number:
PCT/JP2016/060832
Publication Date:
October 06, 2016
Filing Date:
March 31, 2016
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L21/3205; H01L21/768; H01L23/522; H01L23/532
Foreign References:
| JP2007305955A | 2007-11-22 | |||
| JP2003101222A | 2003-04-04 | |||
| JP2007105859A | 2007-04-26 | |||
| JPH08330295A | 1996-12-13 | |||
| JPS59126643A | 1984-07-21 |
Other References:
See also references of EP 3279924A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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