Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/159640
Kind Code:
A1
Abstract:
The present invention accurately controls the sidewall locations of a metal electrode and improves the coverage of the upper layer of the metal electrode. Provided is a semiconductor device comprising a semiconductor substrate and a metal electrode formed above the top surface of the semiconductor substrate. The sidewalls of the metal electrode include a lower portion contacting the semiconductor substrate, and an upper portion formed above the lower portion at a smaller inclination with respect to the top surface of the semiconductor substrate than the lower portion. An active region formed on the semiconductor substrate is further provided, and the metal electrode may be a field plate formed further outside on the top surface of the semiconductor substrate than the active region. The upper portion of the sidewalls of the field plate may have a convex shape protruding upward.
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Inventors:
OGAWA ERI (JP)
ONOZAWA YUICHI (JP)
SUGIMURA KAZUTOSHI (JP)
TANAKA HIROYUKI (JP)
OHI KOTA (JP)
IKURA YOSHIHIRO (JP)
ONOZAWA YUICHI (JP)
SUGIMURA KAZUTOSHI (JP)
TANAKA HIROYUKI (JP)
OHI KOTA (JP)
IKURA YOSHIHIRO (JP)
Application Number:
PCT/JP2017/010047
Publication Date:
September 21, 2017
Filing Date:
March 13, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/41; H01L21/28; H01L21/3065; H01L21/336; H01L29/06; H01L29/739; H01L29/78
Foreign References:
JP2015213110A | 2015-11-26 | |||
JPH0242727A | 1990-02-13 | |||
JP2013055214A | 2013-03-21 | |||
JP2015092631A | 2015-05-14 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
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