Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/167591
Kind Code:
A1
Abstract:
Provided is a semiconductor device which can be microfabricated or highly integrated. The present invention comprises a first conductive body, a second conductive body on the first conductive body, a first insulating body covering the second conductive body, a first oxide on the first insulating body, and a second oxide on the first oxide. In the first oxide and the first insulating body, an opening overlapping at least a part of the first conductive body is provided. The second oxide is electrically connected to the first conductive body via the opening.
Inventors:
YAMAZAKI SHUNPEI (JP)
TAKEUCHI TOSHIHIKO (JP)
YAMADE NAOTO (JP)
FUJIKI HIROSHI
MORIWAKA TOMOAKI (JP)
KIMURA SHUNSUKE
TAKEUCHI TOSHIHIKO (JP)
YAMADE NAOTO (JP)
FUJIKI HIROSHI
MORIWAKA TOMOAKI (JP)
KIMURA SHUNSUKE
Application Number:
PCT/IB2018/051253
Publication Date:
September 20, 2018
Filing Date:
February 28, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/8242; H01L27/108
Foreign References:
| JP2011210744A | 2011-10-20 | |||
| JP2015109425A | 2015-06-11 | |||
| JP2015109429A | 2015-06-11 | |||
| JP2015144271A | 2015-08-06 | |||
| JP2016039375A | 2016-03-22 |
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