Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/038664
Kind Code:
A1
Abstract:
Provided is a semiconductor device enabling high integration. Specifically provided is a semiconductor device which has a first and a second transistor and a first and a second capacitive element, and in which: the first and second transistors are each provided with a gate insulator upon an oxide, and a gate electrode; the first and second capacitive elements are each provided with a conductor, a dielectric upon the conductor, and an oxide; the first and second transistors are disposed between the first capacitive element and the second capacitive element; one among the source and the drain of the first transistor is shared as one among the source and the drain of the second transistor; the other among the source and the drain of the first transistor is shared as one electrode of the first capacitive element; the other among the source and the drain of the second transistor is shared as one electrode of the second capacitive element; and the channel lengths of the first and second transistors are longer than the lengths of a fourth and a fifth conductor in a direction parallel to the short sides thereof.

Inventors:
ENDO, Yuta (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
SUZAWA, Hideomi (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
Application Number:
IB2018/056301
Publication Date:
February 28, 2019
Filing Date:
August 21, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (398 Hase, Atsugi-shi Kanagawa, 36, 〒2430036, JP)
International Classes:
H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/10; H01L27/108; H01L29/786
Foreign References:
JP2013211537A2013-10-10
JP2017147445A2017-08-24
JP2011227981A2011-11-10
JP2013214729A2013-10-17
JP2015233155A2015-12-24
Download PDF: