Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/048983
Kind Code:
A1
Abstract:
Provided is a semiconductor device having excellent electrical characteristics and being capable of high integration. The semiconductor device comprises: a first insulator; an oxide on the first insulator; a second insulator on the oxide; a first conductor on the second insulator; a third insulator in contact with the top surface of the first insulator, a side surface of the oxide, the top surface of the oxide, a side surface of the second insulator and a side surface of the first conductor; and a fourth insulator on the third insulator, wherein the third insulator has an opening that exposes the first insulator, and the fourth insulator is in contact with the first insulator via the opening.
Inventors:
YAMAZAKI SHUNPEI (JP)
TAKEUCHI TOSHIHIKO (JP)
MURAKAWA TSUTOMU (JP)
KOMAGATA HIROKI (JP)
MATSUBAYASHI DAISUKE (JP)
ISHIHARA NORITAKA
NONAKA YUSUKE
TAKEUCHI TOSHIHIKO (JP)
MURAKAWA TSUTOMU (JP)
KOMAGATA HIROKI (JP)
MATSUBAYASHI DAISUKE (JP)
ISHIHARA NORITAKA
NONAKA YUSUKE
Application Number:
PCT/IB2018/056534
Publication Date:
March 14, 2019
Filing Date:
August 28, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/336; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/10; H01L27/108; H01L29/786
Domestic Patent References:
| WO2017072627A1 | 2017-05-04 |
Foreign References:
| US20160372606A1 | 2016-12-22 | |||
| JP2016134578A | 2016-07-25 | |||
| JP2006060209A | 2006-03-02 | |||
| JP2017130647A | 2017-07-27 |
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