Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/092541
Kind Code:
A1
Abstract:
Provided is a semiconductor device having excellent reliability. This device is provided with a first insulating body, a first oxide disposed upon the first insulating body, a second oxide disposed upon the first oxide, a first conductor and a second conductor disposed, mutually separated, upon the second oxide, a third oxide disposed upon the second oxide, the first conductor, and the second conductor, a second insulating film disposed upon the third oxide, and a third conductor disposed upon the second oxide with the third oxide and the second insulating film sandwiched therebetween, the third oxide containing a metallic element and nitrogen, and the metallic element being bound to the nitrogen.
Inventors:
YAMAZAKI SHUNPEI (JP)
HIRAMATSU TOMOKI
NONAKA YUSUKE
ISHIHARA NORITAKA
SAMBONSUGE SHOTA
YAMANE YASUMASA (JP)
ENDO YUTA
HIRAMATSU TOMOKI
NONAKA YUSUKE
ISHIHARA NORITAKA
SAMBONSUGE SHOTA
YAMANE YASUMASA (JP)
ENDO YUTA
Application Number:
PCT/IB2018/058425
Publication Date:
May 16, 2019
Filing Date:
October 29, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
Foreign References:
| JP2014056945A | 2014-03-27 | |||
| JP2017143239A | 2017-08-17 | |||
| JP2017199901A | 2017-11-02 | |||
| JP2017168839A | 2017-09-21 |
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