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Title:
SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/145818
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a high on-state current. The semiconductor device comprises: a first oxide; a second oxide over the first oxide; a third oxide over the second oxide; a first insulator over the third oxide; a conductor over the first insulator; a second insulator in contact with a part of the upper surface of the second oxide, a part of the side surface of the second oxide, and a part of the side surface of the third oxide; a third insulator in contact with the upper surface of the second insulator, and an other part of the side surface of the third oxide; a fourth insulator over the third insulator; and a fifth insulator in contact with the upper surface of the third oxide, the upper surface of the first insulator, the upper surface of the conductor, and the upper surface of the third insulator. The second oxide comprises a first region, a second region, a third region, a fourth region positioned between the first region and the third region, and a fifth region positioned between the second region and the third region. The conductor is provided over the third region so as to overlap with the third region. The second insulator is in contact with the first region and the second region.

Inventors:
YAMAZAKI SHUNPEI (JP)
OKAZAKI KENICHI (JP)
OIKAWA YOSHIAKI (JP)
Application Number:
PCT/IB2019/050284
Publication Date:
August 01, 2019
Filing Date:
January 15, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108
Domestic Patent References:
WO2016125052A12016-08-11
Foreign References:
JP2017034051A2017-02-09
JP2017130647A2017-07-27
US20160372606A12016-12-22
JP2017028269A2017-02-02
JP2017063192A2017-03-30
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