Title:
SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/193463
Kind Code:
A1
Abstract:
Provided is a miniaturized, highly integrated semiconductor device. One embodiment of the present invention is a semiconductor device comprising a first insulator, a second insulator, a first conductor, a second conductor, and a semiconductor layer, the first insulator having an opening that exposes the semiconductor layer, the first conductor being disposed in contact with the semiconductor layer on the bottom surface of the opening, the second insulator being disposed in contact with the upper surface of the first conductor and the side surface of the opening, the second conductor being in contact with the upper surface of the first conductor and disposed inside the opening with the second insulator therebetween, and the second insulator having oxygen barrier properties.
Inventors:
KAKEHATA TETSUYA (JP)
ENDO YUTA
ENDO YUTA
Application Number:
PCT/IB2019/052519
Publication Date:
October 10, 2019
Filing Date:
March 28, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/768; H01L21/8239; H01L21/8242; H01L23/522; H01L27/105; H01L27/108; H01L27/1156; H01L29/417; H01L29/423; H01L29/49; H01L29/788; H01L29/792
Domestic Patent References:
| WO2018020350A1 | 2018-02-01 |
Foreign References:
| JP2017228777A | 2017-12-28 |
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