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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/208072
Kind Code:
A1
Abstract:
This semiconductor device manufacturing method comprises a preparation step and a sintering/bonding step. In the preparation step, a sintering/bonding workpiece (X) is prepared, the sintering/bonding workpiece (X) having a stack structure comprising: a substrate (S); a plurality of semiconductor chips (C) disposed on and bonded to one surface side of the substrate (S); and a plurality of sintering/bonding material layers (11) containing sintering particles and respectively interposed between the semiconductor chips (C) and the substrate (S). In the sintering/bonding step, a sintered layer (12) is formed from each of the sintering/bonding material layers (11) by superimposing an impact-absorbing sheet (20) having a thickness of 5-5000 μm and a tensile elasticity of 2-150 MPa, and the sintering/bonding workpiece (X), sandwiching the impact-absorbing sheet (20) and the sintering/bonding workpiece (X), which have been superimposed, between a pair of press surfaces (Pa, Pa), and causing the sintering/bonding workpiece (X) to undergo a heating process while pressing the sintering/bonding workpiece (X) in the stack direction thereof. The semiconductor device manufacturing method is adaptive to comprehensively sinter and bond a plurality of semiconductor chips to a substrate under a pressing condition.

Inventors:
MITA RYOTA (JP)
ICHIKAWA TOMOAKI (JP)
Application Number:
JP2019/013149
Publication Date:
October 31, 2019
Filing Date:
March 27, 2019
Export Citation:
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Assignee:
NITTO DENKO CORP (JP)
International Classes:
H01L21/52
Domestic Patent References:
WO2017195399A12017-11-16
WO2014129626A12014-08-28
WO2017057485A12017-04-06
Attorney, Agent or Firm:
GOTO & CO. (JP)
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