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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/085220
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a semiconductor device manufacturing method which protects the bump neck of a semiconductor wafer comprising a bump by using a protective film formed from a curable resin layer, while making it possible to both thin the semiconductor wafer and suppress warping of the semiconductor wafer. This semiconductor device manufacturing method includes steps (A)-(E) below in the stated order: (A) a step for forming a curable resin layer on a bump forming surface of a semiconductor wafer comprising a bump; (B) a step for forming a protective film by curing the curable resin layer; (C) a step for adhering a back grind tape to the forming surface of the protective film on the semiconductor wafer comprising the bump; (D) a step for grinding a surface of the semiconductor wafer comprising the bump, opposite the bump forming surface, while the back grind tape is adhered; and (E) a step for peeling off the back grind tape from the semiconductor wafer comprising the bump after the grinding.

Inventors:
TAKYU SHINYA (JP)
YAMADA TADATOMO (JP)
NEMOTO TAKU (JP)
MORISHITA TOMOTAKA (JP)
Application Number:
PCT/JP2019/041004
Publication Date:
April 30, 2020
Filing Date:
October 18, 2019
Export Citation:
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Assignee:
LINTEC CORP (JP)
International Classes:
H01L21/304; B23K26/53; B24B41/06; C09D201/00; H01L21/301; H01L21/60
Domestic Patent References:
WO2016195061A12016-12-08
WO2017077809A12017-05-11
Foreign References:
JP2005064228A2005-03-10
JP2002016022A2002-01-18
JP2015092594A2015-05-14
JP2009260230A2009-11-05
Attorney, Agent or Firm:
OHTANI PATENT OFFICE (JP)
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