SEMICONDUCTOR DEVICE MANUFACTURING METHOD

WIPO Patent Application WO/2020/093681

A1

A semiconductor device manufacturing method, wherein the etching apparatus used comprises a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed. Performing etching and cleaning steps by means of the combination of ion beam etching and reactive ion etching not only can effectively reduce sidewall metal contamination and structural damage caused by physical etching and improve etching efficiency, but also reduces the risk of over etching and improves device performance and yield.

JIANG ZHONGYUAN (CN)
LIU ZIMING (CN)
WANG JUEBIN (CN)
CHE DONGCHEN (CN)
CUI HUSHAN (CN)
HU DONGDONG (CN)
CHEN LU (CN)
REN HUIQUN (CN)
ZOU ZHIWEN (CN)
XU KAIDONG (CN)

PCT/CN2019/088103

May 14, 2020

May 23, 2019

Click for automatic bibliography generation  

JIANGSU LEUVEN INSTR CO LTD (CN)

H01L43/12; C23F4/00

WO2007109117A2

2007-09-27

CN106676532A	2017-05-17
CN108242502A	2018-07-03
CN108232000A	2018-06-29
JP2003078185A	2003-03-14

NANJING JINGWEI PATENT & TRADEMARK AGENCY CO., LTD (CN)

View/Download PDF      PDF Help

Previous Patent: SWITCH CONTROL METHOD, DEVICE, ELECTRONIC APPARATUS, AND COMPUTER READABLE STORAGE MEDIUM

Next Patent: MULTILAYER MAGNETIC TUNNEL JUNCTION ETCHING METHOD AND MRAM DEVICE