Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/169805
Kind Code:
A1
Abstract:
A semiconductor device manufacturing method, comprising: forming, in a semiconductor substate, a doping region having a first conductivity type, and forming a gate structure on the doping region; along a perpendicular direction, implanting dopant ions having a second conductivity type into a second region of the doping region to form a source/drain region having the second conductivity type; and along a tilt direction towards the gate structure, implanting dopant ions having the first conductivity type into a first region of the doping region and performing annealing to form a Halo region that extends from the source/drain region to the gate structure, wherein the first region is close to the gate structure, the second region is located at one side, distant from the gate structure, of the first region, and the first region and the second region have no overlapped region.
Inventors:
MU KEJUN (CN)
Application Number:
PCT/CN2021/076253
Publication Date:
September 02, 2021
Filing Date:
February 09, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/335; H01L21/265
Foreign References:
| US20050077573A1 | 2005-04-14 | |||
| CN105870003A | 2016-08-17 | |||
| CN101728263A | 2010-06-09 | |||
| CN104779167A | 2015-07-15 | |||
| CN102087979A | 2011-06-08 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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