Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/199932
Kind Code:
A1
Abstract:
Provided is a semiconductor device which is equipped with: a semiconductor substrate which has a top surface and a bottom surface and is provided with a drift region of a first conductive type; a transistor section which has a collector region of a second conductive type which contacts the bottom surface of the semiconductor substrate and an emitter region of the first conductive type which has a higher doping concentration than does the drift region and is provided adjacent to the top surface of the semiconductor substrate; and a diode section which has a cathode region of the first conductive type which contacts the bottom surface of the semiconductor substrate. Therein, the avalanche breakdown in the diode section is at least 0.7 times and less than 1 time the avalanche breakdown in the transistor section.
Inventors:
YOSHIKAWA KOH (JP)
Application Number:
PCT/JP2023/014827
Publication Date:
October 19, 2023
Filing Date:
April 12, 2023
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/336; H01L29/78; H01L21/8234; H01L27/06; H01L27/088; H01L29/739; H01L29/861; H01L29/868
Foreign References:
| JP2016139719A | 2016-08-04 | |||
| JP2014175517A | 2014-09-22 | |||
| JP2016162855A | 2016-09-05 | |||
| JP2018078230A | 2018-05-17 |
Attorney, Agent or Firm:
RYUKA & PARTNERS (JP)
Download PDF: