Title:
SEMICONDUCTOR DEVICE, MEMORY DEVICE, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/111104
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device which maintains data without being influenced by a change in temperature. The present invention is provided with a band gap reference circuit, a voltage reference circuit, a voltage control oscillator, a negative voltage generating circuit, and an operation mode control circuit, and the voltage reference circuit has a first transistor which has a metal oxide in a semiconductor layer. The band gap reference circuit has a function of outputting a first voltage and a first current. The present invention has a function of outputting a threshold voltage of the first transistor by providing the first transistor with the first current . The voltage control oscillator has a function of switching a potential difference between the threshold voltage and the first voltage to a first frequency. The negative voltage generating circuit has a function of generating a first negative voltage according to the first frequency. The present invention has a function of stabilizing the threshold voltage by providing a back gate of the first transistor with the first negative voltage.
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Inventors:
TAKAHASHI KEI (JP)
KUSUNOKI KOJI (JP)
WATANABE KAZUNORI (JP)
KUSUNOKI KOJI (JP)
WATANABE KAZUNORI (JP)
Application Number:
PCT/IB2018/059374
Publication Date:
June 13, 2019
Filing Date:
November 28, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/822; G09F9/30; G11C11/4074; H01L21/8242; H01L27/04; H01L27/108; H01L27/1156; H01L29/786
Foreign References:
| JP2015188214A | 2015-10-29 | |||
| JP2017201569A | 2017-11-09 | |||
| JP2014041344A | 2014-03-06 |
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