Title:
SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/029544
Kind Code:
A1
Abstract:
A semiconductor device comprising a simply manufacturable resistor element
in which variation of resistance can be suppressed without increasing the element
area when a thin film transistor is employed as the resistor element. The semiconductor
device comprises a first thin film transistor employed as a resistor element,
and a second thin film transistor including a semiconductor layer having a low
concentration drain region and a high concentration drain region of different
impurity concentrations fabricated on a substrate. In this semiconductor
device, the impurity concentration in the channel region of the semiconductor
layer in the first thin film transistor is identical to that in the low concentration
drain region of the semiconductor layer in the second thin film transistor.
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Inventors:
KITAKADO, Hidehito (())
Application Number:
JP2007/061313
Publication Date:
March 13, 2008
Filing Date:
June 04, 2007
Export Citation:
Assignee:
Sharp Kabushiki Kaisha (22-22, Nagaike-cho Abeno-ku, Osaka-sh, Osaka 22, 5458522, JP)
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町２２番２２号 Osaka, 5458522, JP)
シャープ株式会社 (〒22 大阪府大阪市阿倍野区長池町２２番２２号 Osaka, 5458522, JP)
International Classes:
H01L29/786; H01L21/336; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/08
Attorney, Agent or Firm:
YASUTOMI, Yasuo et al. (MT-2 BLDG, 5-36Miyahara 3-chome,Yodogawa-ku, Osaka-shi, Osaka 03, 5320003, JP)
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