Title:
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/025893
Kind Code:
A1
Abstract:
Provided is a semiconductor device having a large threshold voltage. The semiconductor device comprises: a first conductor disposed on a substrate; a first insulator disposed on the first conductor; a first oxide disposed in contact with the upper surface of the first insulator; a second insulator disposed in contact with the upper surface of the first oxide; a second oxide disposed on the second insulator; a third insulator disposed on the second oxide; and a second conductor disposed on the third insulator, wherein a mixed layer is formed between the first insulator and the first oxide, the mixed layer includes at least one of the atoms contained in the first insulator and at least one of the atoms contained in the first oxide, and the mixed layer has a negative fixed charge.
Inventors:
TANEMURA KAZUKI (JP)
KAMATA ETSUKO (JP)
SAWAI HIROMI (JP)
MATSUBAYASHI DAISUKE (JP)
KAMATA ETSUKO (JP)
SAWAI HIROMI (JP)
MATSUBAYASHI DAISUKE (JP)
Application Number:
PCT/IB2018/055312
Publication Date:
February 07, 2019
Filing Date:
July 18, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L29/786; H01L21/336; H01L21/82; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108
Foreign References:
| US20170040424A1 | 2017-02-09 | |||
| JP2017130647A | 2017-07-27 | |||
| JP2017028288A | 2017-02-02 |
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