SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

Title:

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

Document Type and Number:

WIPO Patent Application WO/2001/099168

Kind Code:

A1

Abstract:

A semiconductor device has the multilayer wiring structure that includes at least one insulating layer having a set of conducting parts of an area of 500 µm?2¿ or greater and a width of 1.0 µm or narrower. A method of manufacturing such a semiconductor device comprises a chemical and mechanical polishing step for smoothing the surface of the insulating layer (501), a washing step for washing the smoothed surface of the insulating layer with chemical solution (502), and a rinsing step for removing the chemical solution (503). The rinsing step uses water containing dissolved oxygen less than 6 ppm by weight.

Inventors:

HORIUCHI HIROSHI (JP)
YAMAMOTO TAMOTSU (JP)
TAKIGAWA YUKIO (JP)
SUZUKI SHIGERU (JP)
SANTO NOBUAKI (JP)
MIYAJIMA MOTOSHU (JP)

Application Number:

PCT/JP2000/004164

Publication Date:

December 27, 2001

Filing Date:

June 23, 2000

Export Citation:

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Assignee:

FUJITSU LTD (JP)
HORIUCHI HIROSHI (JP)
YAMAMOTO TAMOTSU (JP)
TAKIGAWA YUKIO (JP)
SUZUKI SHIGERU (JP)
SANTO NOBUAKI (JP)
MIYAJIMA MOTOSHU (JP)

International Classes:

H01L21/02; H01L21/321; H01L21/768; H01L23/532; (IPC1-7): H01L21/304; H01L21/3205

Foreign References:

JP2000091277A	2000-03-31
JP2000040679A	2000-02-08
JPH1064870A	1998-03-06
JPH06177102A	1994-06-24

Other References: