Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/159126
Kind Code:
A1
Abstract:
A semiconductor device according to an embodiment of the present invention comprises: an SOI substrate on which a silicon substrate layer, a first insulating layer, and a semiconductor layer are laminated in the stated order; a first transistor provided on the semiconductor layer; a second transistor having a higher withstand voltage than does the first transistor, the second transistor being provided on the silicon substrate layer; and an element isolation film provided between the first transistor and the second transistor, the element isolation film being configured from a second insulating layer that is buried in an opening that passes through the semiconductor layer and the first insulating layer and reaches the inside of the silicon substrate layer, and a portion of the second insulating layer constituting a gate insulation film of the second transistor.
Inventors:
GOCHO TETSUO (JP)
Application Number:
PCT/JP2018/001143
Publication Date:
September 07, 2018
Filing Date:
January 17, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/088; H01L21/762; H01L27/144; H01L27/146
Foreign References:
| JP2013105981A | 2013-05-30 | |||
| JP2013105982A | 2013-05-30 | |||
| JP2014143269A | 2014-08-07 | |||
| JP2014236097A | 2014-12-15 | |||
| JP2013118317A | 2013-06-13 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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