SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DEVICE

WIPO Patent Application WO/2010/084657

A1

Disclosed is a semiconductor device having an improved manufacturing efficiency and high reliability, wherein a malfunction does not easily occur.  Specifically disclosed is a thin film transistor (semiconductor device) (60) which comprises a gate electrode (65), a semiconductor film (67), and a gate insulating film (66) formed between the gate electrode (65) and the semiconductor film (67).  The thin film transistor (semiconductor device) (60) is characterized in that the gate insulating film (66) comprises a first gate insulating film (66a) and a second gate insulating film (66b) in order from the gate electrode (65) side, that the first gate insulating film (66a) traps less electrons from the gate electrode (65) to the gate insulating film (66) when compared with the second gate insulating film (66b), and that the second gate insulating film (66b) traps less electrons from the gate insulating film (66) to the semiconductor film (67) when compared with the first gate insulating film (66a).

YAMAGAMI TAKASHI
MITSUDOME KAZUYA
IWASA KAZUHIKO

PCT/JP2009/068874

July 29, 2010

November 05, 2009

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SHARP KK (JP)
YAMAGAMI TAKASHI
MITSUDOME KAZUYA
IWASA KAZUHIKO

H01L29/786; G02F1/1368; H01L21/205; H01L21/283; H01L21/316; H01L21/318; H01L21/336; H01L29/423; H01L29/49

JPH07162001A	1995-06-23
JPH0878694A	1996-03-22
JPH08111531A	1996-04-30

AKATSUKI UNION PATENT FIRM (JP)
Patent business corporation dawn joint patent firm (JP)

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