Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/001927
Kind Code:
A1
Abstract:
An objective of the present invention is to obtain a semiconductor device such that thermal stress-induced detachment of bonding material at a bonding part between a base plate and an insulation substrate is suppressed and reliability is improved. The semiconductor device comprises: a base plate (1); an insulation substrate (2) comprising an insulation layer (21), with metal layers (22, 23) being disposed on the upper surface and lower surface of the insulation layer (21); a bonding material (3) which bonds the upper surface of the base plate (1) to the lower surface of the metal layer (23) on the lower surface side of the insulation layer (21); a case member (4) which is positioned on the upper surface of the base plate (1) and encloses the insulation substrate (2); and a pressing member (6) which is positioned in the region enclosed by the base plate (1) and the case member (4) and abuts the upper surface of the insulation substrate (2) while straddling opposite sides of the insulation substrate (2).

Inventors:
HANADA, Ryuichiro (JP)
Application Number:
JP2019/026306
Publication Date:
January 07, 2021
Filing Date:
July 02, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MITSUBISHI ELECTRIC CORPORATION (JP)
International Classes:
H01L23/12; H01L23/29
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (JP)
Download PDF: