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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2010/004679
Kind Code:
A1
Abstract:
A semiconductor device is provided with: a gate insulating film (13) formed on a first conductivity type semiconductor region (10x); a gate electrode (25A), which is formed on the gate insulating film (13) and has a second conductivity type polysilicon film (28A) and a first silicon mixed-crystal layer (25) which is formed on the polysilicon film (28A) and contains carbon; a first silicide layer (29) formed on the first silicon mixed-crystal layer (25); a second conductivity type impurity diffused region (24) formed on a region below the side of the gate electrode (25A) on the semiconductor region (10x); a second silicon mixed-crystal layer (26), which is formed on an upper region of the impurity diffused region (24) and contains carbon; and a second silicide layer (30) formed on the second silicon mixed-crystal layer (26).

Inventors:
ITO, Satoru (())
Application Number:
JP2009/002250
Publication Date:
January 14, 2010
Filing Date:
May 21, 2009
Export Citation:
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Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真1006番地 Osaka, 〒5718501, JP)
International Classes:
H01L21/336; H01L21/28; H01L29/423; H01L29/49; H01L29/78
Domestic Patent References:
WO2006066194A22006-06-22
Foreign References:
JPH11243065A1999-09-07
JPH10125916A1998-05-15
JP2006060175A2006-03-02
JP2004172389A2004-06-17
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (Osaka-Marubeni Bldg, 5-7Hommachi 2-chome, Chuo-ku, Osaka-sh, Osaka 53, 〒5410053, JP)
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