Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2010/084538
Kind Code:
A1
Abstract:
Disclosed is a semiconductor device which comprises an ELK film (12) which is formed on a semiconductor substrate (11), an SiN film (13) which is formed on the ELK film (12), and a plurality of wiring lines (16) which are formed in the ELK film (12) and the SiN film (13) so as to be substantially at the same level. The plurality of wiring lines (16) have a non-dense wiring region (A) having a first wiring area ratio that is a wiring occupancy ratio per unit volume, and a dense wiring region (B) having a second wiring area ratio that is higher than the first wiring area ratio. The height of the upper surface of the dense wiring region (B) in the SiN film (13) is lower than the height of the upper surface of the non-dense wiring region (A) in the SiN film (13).
Inventors:
KANAYAMA, Shutetsu (())
Application Number:
JP2009/005273
Publication Date:
July 29, 2010
Filing Date:
October 09, 2009
Export Citation:
Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
International Classes:
H01L21/3205; B24B37/00; H01L21/304; H01L21/768; H01L23/522
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (Osaka-Marubeni Bldg, 5-7Hommachi 2-chome, Chuo-ku, Osaka-sh, Osaka 53, 〒5410053, JP)
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