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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2010/150720
Kind Code:
A1
Abstract:
Disclosed is a semiconductor device which comprises a variable resistance element having sufficient switching characteristics and has high reliability, high integration and excellent insulation characteristics. Specifically disclosed is a semiconductor device which comprises a variable resistance element within a multilayer wiring layer on a semiconductor substrate. The semiconductor device is characterized in that the variable resistance element has a laminated structure wherein a first electrode, a first ion-conductive layer that is formed of an oxide film of a valve metal, a second ion-conductive layer that contains oxygen, and a second electrode are laminated in this order, and that a wiring line in the multilayer wiring layer also functions as the first electrode.

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Inventors:
TADA MUNEHIRO (JP)
SAKAMOTO TOSHITSUGU (JP)
HADA HIROMITSU (JP)
Application Number:
PCT/JP2010/060425
Publication Date:
December 29, 2010
Filing Date:
June 21, 2010
Export Citation:
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Assignee:
NEC CORP (JP)
TADA MUNEHIRO (JP)
SAKAMOTO TOSHITSUGU (JP)
HADA HIROMITSU (JP)
International Classes:
H01L27/10; C23C14/08; H01L21/316; H01L21/82; H01L21/822; H01L27/04; H01L45/00; H01L49/00
Domestic Patent References:
WO2007114099A12007-10-11
WO2008001712A12008-01-03
WO2010079816A12010-07-15
Foreign References:
JP2009043757A2009-02-26
Attorney, Agent or Firm:
MIYAZAKI, Teruo et al. (JP)
Akio Miyazaki (JP)
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