SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2011/043448

Kind Code:

A1

Abstract:

Provided is a semiconductor device comprising at least a first electrode, a second electrode, and a layer that is interposed between the first electrode and the second electrode and includes a transition metal oxide layer, the transition metal oxide layer comprising a first transition metal oxide layer produced from a first transition metal, and a second transition metal oxide layer produced from a second transition metal different from the first transition metal, the first transition metal oxide layer being provided on the first electrode side, the second transition metal oxide layer being provided on the second electrode side, the first transition metal oxide layer and the second transition metal oxide layer being in contact with each other, the first transition metal oxide layer having a oxygen concentration gradient from an interface between the first transition metal oxide layer and the second transition metal oxide layer to the first electrode side, and the oxygen concentration at the interface being larger than the oxygen concentration on the first electrode side.

Inventors:

SAKOTSUBO YUKIHIRO (JP)
TERAI MASAYUKI (JP)
TADA MUNEHIRO (JP)
YABE YUKO (JP)
SAITO YUKISHIGE (JP)

Application Number:

PCT/JP2010/067706

Publication Date:

April 14, 2011

Filing Date:

October 04, 2010

Export Citation:

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Assignee:

NEC CORP (JP)
SAKOTSUBO YUKIHIRO (JP)
TERAI MASAYUKI (JP)
TADA MUNEHIRO (JP)
YABE YUKO (JP)
SAITO YUKISHIGE (JP)

International Classes:

H01L49/00; H01L21/314; H01L27/10; H01L45/00

Domestic Patent References:

WO2009147790A1

2009-12-10

Foreign References:

JP2009130344A	2009-06-11
JP2009105383A	2009-05-14

Other References:

Z.WEI: "Highly Reliable TaOx ReRAM and Direct Evidence of Redox Reaction Mechanism", IEDM TECHNICAL DIGEST, IEEE, 2008, pages 293

Attorney, Agent or Firm:

ASAI, TOSHIO (JP)
Toshio Asai (JP)

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