SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE

WIPO Patent Application WO/2011/105343

A1

Disclosed is a semiconductor device (100) which has: an oxide semiconductor layer (31), which is formed on an insulating layer (21), and which contains at least one element selected from among a group composed of In, Zn and Sn; a first sacrificial layer (41a) and a second sacrificial layer (41b), which are formed on the oxide semiconductor layer (31) by being spaced apart from each other; a second electrode (52a), which is formed in contact with the upper surface of the first sacrificial layer (41a) and the upper surface of the oxide semiconductor layer (31); and a third electrode (52b), which is formed in contact with the upper surface of the second sacrificial layer (41b) and the upper surface of the oxide semiconductor layer (31). Each of the first sacrificial layer (41a) and the second sacrificial layer (41b) contains an oxide containing at least one element selected from among a group composed of Zn, Ga, Mg, Ca and Sr.

NISHIKI HIROHIKO
CHIKAMA YOSHIMASA
AITA TETSUYA
SUZUKI MASAHIKO
TAKEI MICHIKO
NAKAGAWA OKIFUMI
HARUMOTO YOSHIYUKI
OHTA YOSHIFUMI
HARA TAKESHI
MIZUNO YUUJI

PCT/JP2011/053761

September 01, 2011

February 22, 2011

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SHARP KK (JP)
MIZUNO HINAE
NISHIKI HIROHIKO
CHIKAMA YOSHIMASA
AITA TETSUYA
SUZUKI MASAHIKO
TAKEI MICHIKO
NAKAGAWA OKIFUMI
HARUMOTO YOSHIYUKI
OHTA YOSHIFUMI
HARA TAKESHI

H01L21/336; H01L29/786

JP2009253204A	2009-10-29
JP2009290223A	2009-12-10
JP2008041695A	2008-02-21
JP2010032765A	2010-02-12
JP2010003820A	2010-01-07
JP2008141113A	2008-06-19

OKUDA SEIJI (JP)
Seiji Okuda (JP)

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