Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/173086
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor device, the method comprising: a step (A) for preparing a support (10) in which a first separation layer (3) and a first insulating layer (5) are formed, in the stated order, on a surface of a support substrate (1); a step (B) for preparing an object to be transferred (30); a step (C) for forming a thin-film transistor (M1, M2) on the first insulating layer (5); a step (D) for forming a second insulating layer (20) covering the thin-film transistor (M1, M2); a step (E) for joining the support in which the second insulating layer is formed to the object to be transferred (30) and obtaining an assembly (40), so that the thin-film transistor (M1, M2) opposes the object to be transferred (30) across from the second insulating layer (20); a step (F) for separating at least some of the first separation layer (3) and the support substrate from the assembly (40); and a step (G) for forming a pixel electrode (33) on the surface of the assembly (40) from which the support substrate has been separated so that an electrical connection is established with the thin-film transistor (M1, M2), the surface being on the opposite side from the object to be transferred (30).
Inventors:
TADA KENSHI
Application Number:
PCT/JP2012/064901
Publication Date:
December 20, 2012
Filing Date:
June 11, 2012
Export Citation:
Assignee:
SHARP KK (JP)
TADA KENSHI
TADA KENSHI
International Classes:
G09F9/30; G02F1/1368; G09F9/00; H01L21/336; H01L29/786
Domestic Patent References:
| WO2011067991A1 | 2011-06-09 |
Foreign References:
| JP2003031778A | 2003-01-31 | |||
| JP2008089994A | 2008-04-17 | |||
| JPH01181570A | 1989-07-19 | |||
| JP2008159935A | 2008-07-10 | |||
| JP2006120720A | 2006-05-11 | |||
| JP2003289136A | 2003-10-10 | |||
| JP2007012815A | 2007-01-18 |
Attorney, Agent or Firm:
OKUDA SEIJI (JP)
Seiji Okuda (JP)
Seiji Okuda (JP)
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Claims: