SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Title:

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2013/001949

Kind Code:

A1

Abstract:

A substrate comprises a surface (SR) formed from a semiconductor having a poly-type 4H hexagonal single-crystal structure. The substrate surface (SR) is configured by a first face (S1) which has an orientation (0-33-8) and a second face (S2) which is joined to the first face (S1) and which has an orientation which differs from the orientation of the first face (S1), said faces being alternately disposed. A gate insulation film is disposed upon the surface (SR) of the substrate. A gate electrode is disposed upon the gate insulation film.

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Inventors:

MASUDA TAKEYOSHI (JP)
HARADA SHIN (JP)
WADA KEIJI (JP)
HIYOSHI TORU (JP)

Application Number:

PCT/JP2012/063478

Publication Date:

January 03, 2013

Filing Date:

May 25, 2012

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)
MASUDA TAKEYOSHI (JP)
HARADA SHIN (JP)
WADA KEIJI (JP)
HIYOSHI TORU (JP)

International Classes:

H01L29/12; H01L21/20; H01L21/205; H01L21/336; H01L29/16; H01L29/78

Foreign References:

JPH10270689A	1998-10-09
JP2001102576A	2001-04-13
JP2004071871A	2004-03-04
JP2007165657A	2007-06-28
JP2001503726A	2001-03-21
JP2002261275A	2002-09-13

Other References: