Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/046863
Kind Code:
A1
Abstract:
Provided is a technology for improving semiconductor device performance by providing an ohmic electrode wherein contact resistance is reduced and deterioration of surface morphology (surface roughness) is suppressed at the same time, said ohmic electrode being in ohmic contact with a nitride semiconductor layer. In the case where a thickness of a first molybdenum (Mo) film (MF1) inserted into between an AlGaN layer (AGNL) and an aluminum (Al) film (ALF) is X nm, the relationship of 2 nm≤X≤10 nm is satisfied. The ohmic electrode wherein surface morphology is improved and contact resistance is reduced at the same time can be formed on the AlGaN layer (AGNL) by, for instance, heat treating at a high temperature of 650-850°C a laminated body (LAB) thus configured.
Inventors:
ASANO KAZUNORI (JP)
Application Number:
PCT/JP2012/067801
Publication Date:
April 04, 2013
Filing Date:
July 12, 2012
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP (JP)
ASANO KAZUNORI (JP)
ASANO KAZUNORI (JP)
International Classes:
H01L21/28; H01L21/336; H01L21/338; H01L29/417; H01L29/778; H01L29/78; H01L29/812; H01L33/32; H01L33/36
Foreign References:
| JP2003031895A | 2003-01-31 | |||
| JP2005354040A | 2005-12-22 |
Other References:
A. BASU ET AL.: "Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500°C", J. VAC. SCI. TECHNOL.B, vol. 24, no. 2, 21 March 2006 (2006-03-21), pages L16 - L18, XP012091444, DOI: doi:10.1116/1.2178365
DEEPAK SELVANATHAN ET AL.: "Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures", J. VAC. SCI. TECHNOL. B, vol. 22, no. 5, 7 October 2004 (2004-10-07), pages 2409 - 2416, XP012074641, DOI: doi:10.1116/1.1798811
DEEPAK SELVANATHAN ET AL.: "Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures", J. VAC. SCI. TECHNOL. B, vol. 22, no. 5, 7 October 2004 (2004-10-07), pages 2409 - 2416, XP012074641, DOI: doi:10.1116/1.1798811
Attorney, Agent or Firm:
TSUTSUI, Yamato et al. (JP)
Tsutsui Daiwa (JP)
Tsutsui Daiwa (JP)
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