Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/069113
Kind Code:
A1
Abstract:
Provided is a semiconductor device wherein a diode region and an IGBT region are formed on a same semiconductor substrate. In the semiconductor device, the diode region is provided with a second conductivity-type cathode layer. A second conductivity-type impurity concentration of the cathode layer has a distribution curve line with at least two peaks, and the second conductivity-type impurity concentration is higher than a first conductivity-type impurity concentration at any depth of the cathode layer.
Inventors:
KAMEYAMA SATORU (JP)
Application Number:
PCT/JP2011/075838
Publication Date:
May 16, 2013
Filing Date:
November 09, 2011
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
KAMEYAMA SATORU (JP)
KAMEYAMA SATORU (JP)
International Classes:
H01L27/04; H01L21/336; H01L21/8234; H01L27/06; H01L29/739; H01L29/78; H01L29/861
Foreign References:
| JPH02309676A | 1990-12-25 | |||
| JP2005057235A | 2005-03-03 | |||
| JP2007103770A | 2007-04-19 | |||
| JP2009111188A | 2009-05-21 | |||
| JP2010034172A | 2010-02-12 |
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
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Claims: