SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2013/121691

A1

A semiconductor device (1) is provided with: a semiconductor chip (2), which has a first main surface, and a second main surface on the reverse side of the first main surface; a heat dissipating plate (3), which is disposed to face the first main surface; a first electrode (5), which is disposed between the first main surface and the heat dissipating plate (3), and which is electrically connected to the semiconductor chip (2); a pressure contact member (4), which is disposed to face the second main surface; a second electrode (6), which is disposed between the second main surface and the pressure contact member (4), and which is electrically connected to the semiconductor chip (2); and a pressure generating mechanism, which generates pressure so as to bring the first electrode (5) into pressure contact with the heat dissipating plate (3) and the semiconductor chip (2), and to bring the second electrode (6) into pressure contact with the pressure contact member (4) and the semiconductor chip (2).

KOJIMA TOSHIYUKI
SHIRAISHI TSUKASA
TSUKAHARA NORIHITO
HIROSE TAKAYUKI
IKUTA KEIKO
KOYAMA MASAYOSHI

PCT/JP2013/000036

August 22, 2013

January 10, 2013

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PANASONIC CORP (JP)

H01L23/40; H01L21/52; H01L23/48; H01L25/07; H01L25/18

WO2008123386A1

2008-10-16

JPH0289352A	1990-03-29
JPH0239556A	1990-02-08
JP2009117428A	2009-05-28

"Direct lead bonded high performance power module", MITSUBISHI ELECTRIC CORPORATION TECHNICAL REPORT, vol. 84, no. 4, April 2010 (2010-04-01), pages 232
See also references of EP 2816594A4

MORIMOTO INT'L PATENT OFFICE (JP)
Patent business corporation Morimoto international patent firm (JP)

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