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Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/190924
Kind Code:
A1
Abstract:
This semiconductor device includes: a first magnetic layer (1) that is arranged on a flat substrate surface; and a second magnetic layer (3) that is arranged above the first magnetic layer (1) and is magnetically coupled with the first magnetic layer (1) by magnetostatic coupling or exchange coupling. Between the first magnetic layer (1) and the second magnetic layer (3), a third thin film layer (8) that has a film thickness that does not hinder the magnetic coupling between the first magnetic layer (1) and the second magnetic layer (3) is formed.

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Inventors:
HONJOU HIROAKI (JP)
KINOSHITA KEIZO (JP)
OHNO HIDEO (JP)
Application Number:
PCT/JP2013/062734
Publication Date:
December 27, 2013
Filing Date:
April 24, 2013
Export Citation:
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Assignee:
NEC CORP (JP)
UNIV TOHOKU (JP)
International Classes:
H01L43/08; H01L43/12
Domestic Patent References:
WO2009122990A12009-10-08
WO2011030529A12011-03-17
WO2007015355A12007-02-08
Foreign References:
JPH06244150A1994-09-02
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (JP)
Noriyasu Ikeda (JP)
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