SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2014/112015

A1

In a semiconductor device, a first conduction-type first semiconductor region (15a) and a second conduction-type second semiconductor region (11a) are formed. The first conduction-type first semiconductor region (15a) is in contact with a side surface of a contact trench (16) on an opening portion side and is provided with a higher purity concentration than a second semiconductor layer (15). The second conduction-type first semiconductor region (11a) is in contact with a bottom surface and a side surface on the bottom surface side of the contact trench (16) and is provided with a higher purity concentration than a first semiconductor layer (11). In addition, a first electrode (18) is disposed in the contact trench (16), the first electrode (18) electrically connecting the first semiconductor region (15a) and the second semiconductor region (11a). It is possible to suppress breakage of the semiconductor device when turned from off to on even when the contact trench is reduced in size by a narrowing of the width.

OOSAWA SEIGO (JP)
TOMATSU YUTAKA (JP)
OGINO MASAHIRO (JP)
OOBAYASHI TOMOMI (JP)

PCT/JP2013/007520

July 24, 2014

December 23, 2013

Click for automatic bibliography generation  

DENSO CORP (JP)

H01L29/78; H01L21/336

JP2003174167A	2003-06-20
JP2001345445A	2001-12-14
JP2006120894A	2006-05-11
JP2006059940A	2006-03-02
JPH04113655A	1992-04-15
JP2003101019A	2003-04-04
JP2005183547A	2005-07-07
JP2003092405A	2003-03-28

KIN, Junhi (JP)
Gold Junki (JP)

View/Download PDF      PDF Help

Previous Patent: METHOD FOR MANUFACTURING HEAT DISSIPATION STRUCTURE

Next Patent: VEHICLE OPERATING SYSTEM, AND INFORMATION DEVICE